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march 2016 docid025824 rev 2 1 / 13 this is information on a product in full production. www.st.com STS9P3LLH6 p - channel - 30 v, 12 m typ., - 9 a, stripfet? h6 power mosfet in an so - 8 package datasheet - production data figure 1: internal schematic diagram features order code v ds r ds(on) max i d STS9P3LLH6 - 30 v 15 m? - 9 a ? very low on-resistance ? very low gate charge ? high avalanche ruggedness ? low gate drive power loss applications ? switching applications description this device is a p-channel power mosfet developed using the stripfet? h6 technology with a new trench gate structure. the resulting power mosfet exhibits very low r ds(on) in all packages. table 1: device summary order code marking packages packing STS9P3LLH6 9k3l so - 8 tape and reel
contents STS9P3LLH6 2 / 13 do cid025824 rev 2 contents 1 electrical ratings ............................................................................. 3 2 electrical characteristics ................................................................ 4 2.1 electrical characteristics (curves) ...................................................... 6 3 test circuits ..................................................................................... 8 4 package information ....................................................................... 9 4.1 so -8 package information ................................................................ 9 4.2 so -8 packing information ................................................................ 11 5 revision history ............................................................................ 12
STS9P3LLH6 electrical ratings docid025824 rev 2 3 / 13 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage - 30 v v gs gate - source voltage 20 v i d (1) drain current (continuous) at t amb = 25c - 9 a drain current (continuous) at t amb = 100c - 5.6 i dm (2) drain current (pulsed) - 36 a p tot (1) total dissipation at t amb = 25c 2.7 w t stg storage temperature range - 55 to 150 c t j operating junction temperature range notes: (1) this value is rated according to r thj - amb (2) pulse width limited by safe operating area table 3: thermal data symbol parameter value unit r thj - amb (1) thermal resistance junction - amb 47 c/w notes: (1) when mounted on 1 inch2 fr - 4 board, 2 oz. cu., t 10 s
electrical characteristics STS9P3LLH6 4 / 13 docid025824 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4: on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage i d = - 1 ma - 30 v i dss zero gate voltage drain current (v gs = 0) v ds = - 30 v - 1 a v ds = - 30 v, t c = 125 c (1) - 10 a i gss gate - body leakage current (v ds = 0) v gs = 20 v - 100 na v gs(th) gate threshold voltage v ds = v gs , i d = - 250 a - 1 - 2 v r ds(on) static drain - source on - resistance v gs = - 10 v, i d = - 4.5 a 12 15 m? v gs = - 4.5 v, i d = - 4.5 a 18 22.5 m? notes: (1) defined by design, not subject to production test. table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = - 25 v, f = 1 mhz, v gs = 0 v - 2615 - pf c oss output capacitance - 340 - pf c rss reverse transfer capacitance - 235 - pf q g total gate charge v dd = - 15 v i d = - 9 a v gs = - 4.5 v - 24 - nc q gs gate - source charge - 9 - nc q gd gate - drain charge - 8 - nc table 6: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = - 15 v, i d = - 4.5 a r g = 4.7 ?, v gs = - 10 v - 13.2 - ns t r rise time - 93 - ns t d(off) turn - off delay time - 50 - ns t f fall time - 18 - ns
STS9P3LLH6 electrical characteristics docid025824 rev 2 5 / 13 table 7: source drain diode symbol parameter test conditions min. typ. max. unit v sd (1) forward on voltage i sd = - 4.5 a, v gs = 0 - - 1.1 v t rr reverse recovery time i sd = - 4.5 a, di/dt = 100 a/s v dd = - 24 v, t j = 150 c - 20 ns q rr reverse recovery charge - 16 nc i rrm reverse recovery current - - 1.6 a notes: (1) pulsed: pulse duration = 300 s, duty cycle 1.5%
electrical characteristics STS9P3LLH6 6 / 13 docid025824 rev 2 2.2 electrical characteristics (curves) note: for the p - channel power mosfet, current and voltage polarities are reversed. figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance
STS9P3LLH6 electrical characteristics docid025824 rev 2 7 / 13 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalize d on - resistance vs temperature figure 11 : normalized v (br)dss vs temperature figure 12 : source - drain diode forward characteristics
test circuits STS9P3LLH6 8 / 13 docid025824 rev 2 3 test circuits figure 13 : switching times test circuit for resistive load figure 14 : gate charge test circuit figure 15 : test circuit for inductive load switching and diode recovery times
STS9P3LLH6 package information docid025824 rev 2 9 / 13 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 so -8 package information figure 16 : so-8 package outline
package information STS9P3LLH6 10 / 13 docid025824 rev 2 table 8: so-8 mechanical data dim. mm min. typ. max. a 1.75 a1 0.10 0.25 a2 1.25 b 0.31 0.51 b1 0.28 0.48 c 0.10 0.25 c1 0.10 0.23 d 4.80 4.90 5.00 e 5.80 6.00 6.20 e1 3.80 3.90 4.00 e 1.27 h 0.25 0.50 l 0.40 1.27 l1 1.04 l2 0.25 k 0 8 ccc 0.10 figure 17 : so -8 recommended footprint (dimensions are in mm)
STS9P3LLH6 package information docid025824 rev 2 11 / 13 4.2 so -8 packing information figure 18 : so-8 tape and reel dimensions table 9: so-8 tape and reel mechanical data dim. mm min. typ. max. a 330 c 12.8 13.2 d 20.2 n 60 t 22.4 ao 8.1 8.5 bo 5.5 5.9 ko 2.1 2.3 po 3.9 4.1 p 7.9 8.1
revision history STS9P3LLH6 12 / 13 docid025824 rev 2 5 revision history table 10: document revision history date revision changes 22 - jan - 2014 1 initial release. 15 - mar - 2016 2 modified: title and r ds(on) max value in cover page modified: table 4: "on/off states" , table 5: "dynamic" , table 6: "switching times" and table 7: "source drain diode" minor text changes.
STS9P3LLH6 docid025824 rev 2 13 / 13 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics C all rights reserved

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